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前言 半导体器件制造工艺于六十年代末采用了离子注入工艺,它与扩散工艺相比较,具有掺杂均匀,浓度和深度容易控制,并能透过氧化层进行掺杂,而且避免了高温过程等特点,所以受到普遍重视,尤其在MOS集成电路工艺中在国外已获得普遍应用。目前,离子注入技术在MOS集成电路的制造中一般用来降低和控制阀值电压,实现自对准提高MOS器件的频率响应;制造高反压MOS器件,以及制造短沟道MOS器件等。离子注入将为进一步提高MOS集成电路的速度、密度与功耗的重要工艺之一。 在无产阶级文化大革命的推动下,在开门办学,厂校挂钩,教育与生产相结合方针指导下,山东大学有关师生走出校门与我厂的工人、技术人员一起发扬了自力更生,奋发图强的革命精神,实行大协作,用了九个月的时间自行设计制造和调试成功一台35千电子伏的硼离子注入机,按时投入了微波器件的试验工作。去年,为了适应我厂MOS集成电路试制需要,经过半年时间,把原有的35千电子伏硼注入机,改建为具有中性束偏移器的70千电子伏硼离子注入机。至此该机在配合256位移位寄存器等8个品种的E/DMOS集成电路的试制中发挥了作用。 现对注入机的主要性能与E/DMOS集成电路制作中的离子注入工作作一些介绍。 1.70千电子伏硼离子注入机的主要性能和指标 注入能量:7～70千?
Introduction The semiconductor device manufacturing process used the ion implantation process in the late 1960s. Compared with the diffusion process, it has the advantages of uniform doping, easy control of concentration and depth, doping through the oxide layer, and avoiding the high temperature process Therefore, it has received universal attention especially in MOS integrated circuit technology in foreign countries. At present, ion implantation technology is generally used to reduce and control the threshold voltage in the manufacture of MOS integrated circuits to achieve self-alignment to improve the frequency response of MOS devices; manufacturing high back-pressure MOS devices; and manufacturing short-channel MOS devices. Ion implantation will be one of the important processes to further increase the speed, density and power consumption of MOS integrated circuits. Under the impetus of the Great Proletarian Cultural Revolution and under the guideline of opening schools, linking factories with schools, and integrating education and production, the relevant teachers and students from Shandong University walked out of school and carried forward the revolutionary spirit of self-reliance and hard work with courage and vitality , The implementation of large collaboration, with nine months to design and manufacture of a successful commissioning of a 35 electron beam boron ion implanter, on time into the microwave device test work. Last year, in order to meet the needs of trial production of MOS integrated circuits in our factory, after a half year, the original 35-KV boron infused into the machine was converted into a 70-keV boron ion implanter with a neutral beam deflector. At this point the machine with the 256 shift register 8 varieties of E / DMOS integrated circuit trial played a role. Now the main performance of the injection machine and E / DMOS integrated circuit fabrication of ion implantation work to make some introduction. 1.70 electron volt boron ion implanter main performance and indicators of injection energy: 7 ~ 70 thousand?