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通过分析以PMMA[poly(methyl methacrylate)]为绝缘膜的MIS结构的电学特性,研究了分子量对PMMA薄膜电学特性的影响。PMMA薄膜通过旋涂溶于氯仿的20mg/ml PMMA溶液制成。PMMA薄膜厚度为220nm,临界电场超过1.8MV/cm。测量结果表明:(1)996K分子量PMMA薄膜的单位面积漏电流最小,仅有6.0×10-9/cm2。350K分子量的漏电流较大,为8.5×10-9/cm2;(2)高电场下决定漏电流与场强关系的物理机制是肖特基发射,通过线性拟合计算出银电极与PMMA之间的势垒高度约为0.5eV;(3)分子量大的PMMA陷阱密度小。996K分子的最小,为4.7×1010/cm2。
The effect of molecular weight on the electrical properties of PMMA films was investigated by analyzing the electrical properties of the MIS structure with PMMA [poly (methyl methacrylate) as the insulator. The PMMA film was made by spin-coating a 20 mg / ml PMMA solution in chloroform. PMMA film thickness of 220nm, the critical electric field over 1.8MV / cm. The results show that: (1) The leakage current per unit area of 996K molecular weight PMMA film is the smallest, only 6.0 × 10-9 / cm2.35K has a larger leakage current of 8.5 × 10-9 / cm2; (2) The physical mechanism that determines the relationship between the leakage current and the field strength is Schottky emission. The height of the potential barrier between the silver electrode and the PMMA is approximately 0.5 eV calculated by linear fitting. (3) The PMMA trap with a large molecular weight has a low density. The smallest 996K molecule is 4.7 × 1010 / cm2.