Floquet engineering appears as a new protocol for designing topological states of matter,and features anomalous edge modes pinned at quasi-energy π/T with vani
Structural,elastic,electronic and optical properties of the Pt3Zr intermetallic compound are investigated using first principles calculations based on the densi
The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes(LEDs)grown on silicon subs
The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)wi