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本文描述了用与ＩｎＰ衬底晶格匹配的ＡｌＩｎＡｓ／ＧａＩｎＡｓ异质结双极晶体管制作的集成电路。ＨＢＴ的发射极尺寸为２μｍ×５μｍ，截止频率ｆ＿Ｔ和最高振荡频率ｆ＿ｍａｘ分别为９０ＧＨｚ和７０ＧＨｚ。用电流型逻辑（ＣＭＬ）制作了环形振荡器、触发器分频电路和双模前置换算器。其环形振荡器每门延迟时间为１５．８ｐｓ，ＣＭＬ触发器分频电路反转速率为２４．８ＧＨｚ。而４／５和８／９双模前置换算器分别由１０６和１２４只晶体管组成，可在高达９ＧＨｚ的时钟速率下工作。这两种双模前置换算器电路是ＩｎＰ基Ｈ８Ｔ制作的最大规模电路。
This article describes an integrated circuit fabricated with an AlInAs / GaInAs heterojunction bipolar transistor that is lattice-matched to an InP substrate. The emitter size of HBT is 2μm × 5μm, the cut-off frequency f_T and the maximum oscillation frequency f_max are 90GHz and 70GHz, respectively. A ring oscillator, a flip-flop divider, and a dual-mode pre-scaler are fabricated using current-mode logic (CML). The ring oscillator delay time per door is 15.8ps, CML flip-flop circuit reversal rate of 24.8GHz. The 4/5 and 8/9 dual-mode pre-fader are comprised of 106 and 124 transistors, respectively, and operate at clock rates up to 9 GHz. Both dual-mode pre-fader circuits are the largest circuits made with InP-based H8T.