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利用调节基底表面碳流量的方法促进了热丝ＣＶＤ中硬质合金ＹＧ８上金刚石薄膜的成核，使成核期大为缩短，根据扫描电镜和拉曼光谱对沉积结果的分析，研究了ＹＧ８上金刚石薄膜成核的机理。
The method of adjusting the carbon flux on the surface of the substrate promotes the nucleation of the diamond film on the YG8 in the hot wire CVD and greatly shortens the nucleation period. Based on the analysis of the deposition results by scanning electron microscopy and Raman spectroscopy, Diamond film nucleation mechanism.