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采用电子束蒸发的方法在200℃抛光的(1102)取向的蓝宝石(︿-Al2O3单晶)衬底上淀积200nm的Cr膜,并在高真空中退火。利用MCs+-SIMS技术(在Cs+一次离子轰击下检测MCs+型二次离子)对样品进行了深度剖析,给出了界面组分分布随退火温度与时间的变化关系,并在850℃退火样品中观测到一种新的界面结构。结果表明,MCs+-SIMS技术是研究金属/陶瓷界面扩散与反应的有效方法
A 200 nm Cr film was deposited on a (1102) oriented sapphire (sin-Al 2 O 3 single crystal) substrate polished at 200 ° C by electron beam evaporation and annealed in a high vacuum. The samples were deeply analyzed by MCs + -SIMS technique (detection of MCs + type secondary ions by Cs + primary ion bombardment), and the relationship between the distribution of interface components and the annealing temperature and time was given. The samples annealed at 850 ℃ To a new interface structure. The results show that MCs + -SIMS technology is an effective method to study the diffusion and reaction of metal / ceramic interface