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研究了AZO(ZnO∶Al)替代ITO透明导电膜在GaN基LED中的应用,通过脉冲激光沉积和磁控溅射法制作了AZO薄膜,分析了AZO与p型GaN不良的欧姆接触的物理机理,并利用插入ITO薄层来改善接触电阻,实验用ITO 20nm/AZO 500nm的复合导电薄膜做透明导电薄膜,成功得到了波长为525.74nm、亮度为380.88mcd、电压为3.35V的GaN基绿光LED芯片,相当于单一ITO透明导电膜的性能,整个试验工艺中减少了ITO的使用量,降低了LED芯片的制造成本。
The application of AZO (ZnO: Al) instead of ITO transparent conductive film in GaN-based LED was studied. The AZO thin film was fabricated by pulsed laser deposition and magnetron sputtering. The physical mechanism of the ohmic contact between AZO and p- , And the use of thin ITO films to improve the contact resistance. Experiments using ITO 20nm / AZO 500nm composite conductive film as the transparent conductive film successfully obtained a wavelength of 525.74nm, a brightness of 380.88mcd, a voltage of 3.35V of GaN-based green light LED chip, equivalent to a single ITO transparent conductive film performance, reducing the amount of ITO used throughout the test process, reducing the manufacturing cost of LED chips.