论文部分内容阅读
Ⅲ-V族化合物GaInP是一种高效发光材料.金属有机化学气相沉积(Metal Organic Chemical Vapor Deposition,MOCVD)技术能均匀生长多结、多层和大面积的薄膜材料,是一种非常有效的方法.通过分别运用计算流体力学、动力学蒙特卡罗方法与虚拟现实技术相结合,提出了一个研究垂直MOCVD反应器的GaInP薄膜生长过程的流体动力学、热力学和分子动力学多尺度模拟方法.可视化结果不仅准确和直观的显示了MOCVD反应器里的气体热流场分布情况,而且展示了MOCVD反应器中的GaInP薄膜生长过程.因此,该模拟为我们优化GaInP的MOCVD生长提供了一个重要指导.
Group III-V compound GaInP is a highly efficient luminescent material.MOCVD (Metal Organic Chemical Vapor Deposition) technology is a very effective method to uniformly grow multi-junction, multi-layer and large-area thin film materials By combining computational fluid dynamics and dynamics Monte Carlo method with virtual reality respectively, a multi-scale fluid dynamics, thermodynamic and molecular dynamics simulation method for the GaInP thin film growth of a vertical MOCVD reactor is proposed. The results not only show the distribution of gas heat flow field in the MOCVD reactor accurately and intuitively, but also show the GaInP film growth process in the MOCVD reactor.Thus, this simulation provides an important guide for optimizing the MOCVD growth of GaInP.