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AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 ?/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at Vgs=0.5 V and Vds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (?T ) and a 28-GHz maximum oscillation frequency (?max) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.
AlGaN / GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380? / Sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA / mm at Vgs = 0.5 V and Vds = 7 V with an extrinsic transconductance of 200 mS / mm. A 20-GHz unity current gain cutoff frequency (? T) and a 28-GHz maximum oscillation frequency (? max) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W / mm (power density of 3.33 W / mm) with 41% power added efficiency (PAE) at 4 GHz.