We report a simple, cost-effective and repeatable method for fabricating a large area and uniform substrate for surface-enhanced Raman scattering(SERS). The silicon, micromachined by a femtosecond laser, is coated with gold film and then treated through the dewetting process. The morphology shows a higher electric field enhancement due to light trapping. The enhancement factor of the SERS substrate is 9.2 × 107 with a 5 nm-thick film coated. Moreover, it also exhibits a uniform signal through Raman mapping and chemical stability with the greatest intensity deviation of 6% after a month. The proposed technique provides an opportunity to equip microchips with the SERS capabilities of high sensitivity, chemical stability, and homogeneous signals. We report a simple, cost-effective and repeatable method for fabricating a large area and uniform substrate for surface-enhanced Raman scattering (SERS). The silicon, micromachined by a femtosecond laser, is coated with gold film and then treated through the dewetting process The enhancement shows the higher electric field enhancement due to light trapping. The enhancement factor of the SERS substrate is 9.2 × 107 with a 5 nm-thick film coated. Moreover, it also exhibits a uniform signal through Raman mapping and chemical stability with the greatest intensity deviation of 6% after a month. The proposed technique provides an opportunity to equip microchips with the SERS capabilities of high sensitivity, chemical stability, and homogeneous signals.