本文对离子注入杂质的热再分布过程提出了两种分析手段:其一是已知热再分布的工艺条件,求解扩散方程得到最终杂质分布的解析结果;其二是已知再分布后杂质分布的边界条件,采用牛顿—拉夫逊,蒙特卡罗计算方法,求得最终杂质浓度分布;并给出了CMOS 集成电路中离子注入p 阱的计算结果. In this paper, two kinds of analysis methods are proposed for the thermal redistribution process of ion implanted impurities: one is the known thermal redistribution process conditions, the diffusion equation is solved to get the analytical result of the final impurity distribution; the other is the known impurity distribution after redistribution The boundary conditions were calculated by Newton-Raphson and Monte Carlo method. The final impurity concentration distribution was obtained. The calculation results of p-well ion implantation in CMOS integrated circuit were given.