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针对当前射频系统中电源管理芯片在宽温度范围下对带隙基准稳定性的较高要求,提出了一种新型互补带隙基准电路结构,通过将带隙基准与MOS弱反型区基准的温度系数曲率互补叠加,实现了极宽温度范围内带隙电压基准的高温度稳定性输出。采用0.35μm CMOS工艺对所设计的电路进行了流片验证,测试结果表明,基准电压源工作电压为5 V时,输出基准电压1.28 V,在-55~125℃温度范围内,温度系数可达4.5×10-6/℃,频率1 k Hz时,电源抑制比(PSRR)可达-60 d B,100 k Hz时,PSRR可达-55 d B,电压基准源芯片面积为0.22 mm×0.15 mm。
Aiming at the high requirement of the power management chip in the current RF system for the bandgap reference stability over a wide temperature range, a new complementary bandgap reference circuit structure is proposed. By comparing the bandgap reference with the temperature reference of the MOS weak inversion region Coefficient curvature coefficients complement each other to achieve a wide temperature range of bandgap voltage reference temperature stability of the output. The 0.35μm CMOS process was used to verify the design of the circuit. The test results show that the reference voltage is 1.28 V when the reference voltage is 5 V and the temperature coefficient is within the range of -55 ~ 125 ℃ 4.5 × 10-6 / ℃, PSRR up to -60 d B at 1 k Hz and PSRR up to -55 d B at 100 k Hz, and the voltage reference chip area is 0.22 mm × 0.15 mm.