全球知名半导体制造商ROHM近日世界首家开发出采用沟槽结构的SiCMOSFET,并已建立起了完备的量产体制。与已经在量产中的平面型SiCMOSFET相比,同一芯片尺寸的导通电阻可降低50%,这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。另外,此次开发的SiC-MOSFET计划将推出功率模块及分立封装产品,目 The world’s leading semiconductor manufacturer ROHM recently developed the world’s first grooved SiCMOSFET, and has established a complete mass production system. On-chip SiCMOSFET has been compared to the same chip size on-resistance can be reduced by 50%, which will significantly reduce the power generation for solar power and industrial equipment, power supplies, industrial inverters and other related equipment Of the power loss. In addition, the development of SiC-MOSFET plans to introduce power modules and discrete packaging products, head