近年来,多晶硅技术正在逐渐地应用于半导体器件。特别是用于形成MOS晶体管硅栅,或是作为制备结型晶体管的浅结扩散源,这方面的需要越来越强烈。多晶硅的另一端能与Al电极、Al引线连接,从而可以起器件引线的作用。但是伴随着半导体器件的高集成化,要求电极,引线有高的可(亻告)性。与单晶硅的情况相比,关于多晶硅与金属材料的关系方面的报导很少,成为工艺设计方面的一项课题。 本文以多晶体为重点,主要报告:多晶硅与Al的界面反 In recent years, polycrystalline silicon technology is gradually applied to semiconductor devices. In particular, there is an increasing need for forming a MOS transistor gate, or as a shallow junction diffusion source for making junction transistors. The other end of the polysilicon can be connected with the Al electrode and the Al lead so as to function as a lead of the device. However, with the high integration of semiconductor devices, electrodes and leads have high requirements. Compared with the case of monocrystalline silicon, the reports on the relationship between polysilicon and metallic materials are few and have become a topic in process design. This paper focuses on polycrystalline, the main report: polysilicon and Al interface inversion