Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands.Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system which was designed to be have a high-throughput,multi-wafer(3×2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies,structures and electronics are characterized systematically.The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD,thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%~7%and 6.7%~8%,respectively,and within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 1%and 0.8%,respectively. Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si (100) substrates by employing a home-made horizontal hot wall low pressure chemical vapor deposition (HWLPCVD) system which was designed to have a high-throughput, multi-wafer (3 × 2-inch) capacity. 3C- SiC film properties of the intra- wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, next uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to 6% -7% and 6.7% -8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8 %, respectively.