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通过理论模拟CMOS工艺兼容的Si Ge/Si单光子雪崩二极管,研究并讨论了掺杂条件对于电场分布、频宽特性、以及器件量子效率的影响。设计出具有浅结结构、可在盖革模式下工作、低击穿电压(30 V)的1.06μm单光子技术雪崩光电二极管。器件采用分离吸收倍增区结构,其中Si材料作为倍增区、Si Ge材料作为吸收区,这充分利用了硅材料较高的载流子离化比差异,降低了器件噪声;在1.06μm波长下,Si Ge探测器的量子效率为4.2%,相比于Si探测器的效率提高了4倍。仿真表明优化掺杂条件可以优化电场分布,从而在APD击穿电压处获得更好的带宽特性。
The SiGe / Si single-photon avalanche diode, which is compatible with CMOS technology, is theoretically simulated and the effects of doping conditions on the electric field distribution, bandwidth characteristics and quantum efficiency of the device are discussed and discussed. A 1.06μm single-photon avalanche photodiode is designed with a shallow junction structure and can be operated in Geiger mode with a low breakdown voltage (30 V). The device adopts the structure of separation and absorption multiplication, in which the Si material serves as a multiplication region and the SiGe material serves as the absorption region, which takes full advantage of the high carrier ionization ratio difference of the silicon material and reduces the device noise; at the wavelength of 1.06 μm, The SiGe detector has a quantum efficiency of 4.2%, a 4x improvement over the Si detector. Simulation shows that optimizing the doping conditions can optimize the electric field distribution and thus obtain better bandwidth characteristics at APD breakdown voltage.