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为从工艺角度深入研究航空航天用互补金属氧化物半导体(CMOS)工艺混合信号集成电路总剂量辐射损伤机理,选取国产CMOS工艺制作的NMOS晶体管及寄生双极晶体管进行了60Coγ射线源下的总剂量试验研究.发现:1)CMOS工艺中固有的寄生效应导致NMOS晶体管截止区漏电流对总剂量敏感,随总剂量累积而增大;2)寄生双极晶体管总剂量损伤与常规双极晶体管不同,表现为对总剂量不敏感,分析认为两者辐射损伤的差异来源于制作工艺的不同;3)寄生双极晶体管与NMOS晶体管的总剂量损伤没有耦合效应;4)基于上述研究成果,初步分析CMOS工艺混合信号集成电路中数字模块及模拟模块辐射损伤机制,认为MOS晶体管截止漏电流增大是导致数字模块功耗增大的主因,而Bandgap电压基准源模块对总剂量不敏感源于寄生双极晶体管抗总剂量辐射的能力.
In order to further study the mechanism of total dose radiation damage in mixed signal integrated circuits for aerospace CMOS process, the total dose of 60Co γ-ray source with NMOS transistors and parasitic bipolar transistors fabricated by CMOS process was selected. Experimental results show that: 1) The parasitic effect inherent in the CMOS process results in the leakage current in the NMOS transistor cut-off region being sensitive to the total dose and increasing with the total dose accumulation. 2) The total dose damage of the parasitic bipolar transistor is different from that of the conventional bipolar transistor, Which is not sensitive to the total dose. The analysis shows that the difference of the radiation damage between the two is due to the difference of the manufacturing process. 3) There is no coupling effect between the total dose damage of the parasitic bipolar transistor and the NMOS transistor. 4) Based on the above research results, Process mixed-signal integrated circuits in the digital module and analog module radiation damage mechanism, that MOS transistor cut-off leakage current is the leading cause of the digital module power consumption increase, and Bandgap voltage reference module insensitive to the total dose from the parasitic bipolar Transistor resistance to total dose radiation.