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采用化学湿法方法对红光LED的p-GaP层进行腐蚀,研究了不同溶液、不同的溶液配比以及不同的腐蚀时间对LED光电性能的影响。结果表明,当腐蚀深度为1μm时,化学溶液采用HCl∶HNO3∶H2O体积比为3∶1∶2时,腐蚀GaP后,样品粗化效果最佳,比未进行粗化的样品亮度提升25%左右。并且腐蚀小孔的深度会随着反应时间的增加而逐渐加深,但样品的发光亮度则表现为先增加后减小。湿法腐蚀因其操作简单,成本低廉,反应条件易控,可适用于工业化大批量生产。
The chemical wet method was used to etch the p-GaP layer of the red LED. The effects of different solutions, different solution ratios and different etching times on the photoelectric properties of the LED were studied. The results show that when the corrosion depth is 1μm, the sample is roughed best when the volume ratio of HCl: HNO3: H2O is 3: 1: 2, and the sample is roughened by 25% about. And the depth of etching holes will deepen gradually with the increase of reaction time, but the luminescence brightness of the sample will first increase and then decrease. Due to its simple operation, low cost and easy reaction conditions, wet etching is applicable to industrial mass production.