Hg_(1-x)Cd_xTe(x～0.2)光电导体制作的探测元件已广泛地用于现代热成象系统中。光生载流子向普通器件接触的金属-半导体界面的高复合区的双极位移,即“扫出”,已被认为限制光电导器件性能的主要因素。本文从理论和实验上验证一种新型的、能有效地消除有害扫出效应的器件结构。本文称这种结构为异质结构接触光导体(HC),它的制作是在激发光导 The detection elements made of Hg_ (1-x) Cd_xTe (x ~ 0.2) photoconductors have been widely used in modern thermal imaging systems. Bipolar displacement, ie “sweeping out,” of the high recombination zone at the metal-semiconductor interface where photo-generated carriers come into contact with common devices has been considered as a major factor limiting the performance of the photoconductive device. In this paper, a new type of device structure that can effectively eliminate the harmful sweep-out effect is validated theoretically and experimentally. This structure is called heterostructure contact photoconductor (HC), which is made in the excitation light guide