本文讨论了高反压硅功率晶体管的设计和制造中的有关理论和实际问题。文中讨论了高反压管对硅单晶材料,工艺条件和晶体管结构参数的要求,以及提高高反压管耐压性能的途径。文中还较详细地介绍了一种高反压硅功率晶体管的光刻版图形的设计,以及制造的具体工艺条件,并对有关问题进行了探讨。 This article discusses the theoretical and practical issues involved in the design and manufacture of high-reverse-voltage silicon power transistors. In this paper, we discuss the requirements of the high back pressure tube on the single crystal silicon material, the process conditions and the structural parameters of the transistor, and the ways to improve the pressure resistance of the high back pressure tube. In this paper, the lithography pattern design of a high back-pressure silicon power transistor is introduced in more detail, and the specific manufacturing conditions are introduced. The related problems are also discussed.