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利用通过固相烧结法得到的自制靶材,采用脉冲激光沉积法(PLD)在不同的衬底温度下沉积得到薄膜。通过XRD对它们的晶体结构进行分析,对薄膜断面进行扫描,测量其薄膜厚度。利用四探针法和霍尔效率测试仪,分别对薄膜的电阻率和载流子浓度及迁移率进行测量和分析。最后,用分光光度计对薄膜的透光率进行测量和分析,并计算了薄膜的禁带宽度。结果表明,在500℃下沉积的薄膜综合性能最好,电阻率可达2.611×10-4Ω.cm,透光率在90%以上,禁带宽度为4.29eV。
Using a self-made target material obtained by the solid-phase sintering method, a thin film is deposited by using a pulsed laser deposition method (PLD) at different substrate temperatures. Their crystal structure was analyzed by XRD, the film cross-section was scanned and its film thickness was measured. The resistivity, carrier concentration and mobility of the films were measured and analyzed by four-probe method and Hall-effect tester respectively. Finally, the transmittance of the film was measured and analyzed with a spectrophotometer, and the forbidden band width of the film was calculated. The results show that the films deposited at 500 ℃ have the best comprehensive properties, resistivity of 2.611 × 10-4Ω.cm, transmittance of more than 90% and bandgap of 4.29eV.