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为了在超高频范围内对基模振荡器进行控制和运用滤波器,开展了对于小型体波谐振器的基本材料和器件特性的研究。本文报道了氮化铝(ALN)在构成复合谐振器几何形状和边缘支撑型晶片结构方面的性能。 ALN薄膜是在直流平板磁控管溅镀装置中,用中间电极溅射出来的AL和等离子气体中的N_2之间的等离子体反应生成的。一般溅镀条件是:溅镀压力=1×10~(-3)毛,空气含氮量=99.999％基片温度=200℃,直流功率-225瓦,溅镀率=1.2微米/小时。ALN薄膜的品质用扫描式电子显微镜(SEM)、X射线衍射法和奥格(Auger)电子分光镜进行鉴定。检测结果说明,溅镀的ALN薄膜具有严格的晶向结构,其C轴垂直于Si(硅)基片表面。对于由1.7微米ALN薄膜和8微米Si基片组成的谐振器,测出的基频串联谐振频率为328.53兆赫,基频并联谐振频率为328.61兆赫。这种规格谐振器的Q值约有7500,它在-20℃至+120℃范围内的实测温度系数约为-4×10~(-8)/℃。对于具有1.7微米ALN薄膜和6微米Si基片的谐振器,实测的温度系数是-6×10~(-6)/℃。这种规格谐振器的Q值约为5000,它的基频串联谐振频率是524.11兆赫,而基频并联谐振频率是524.45兆赫。应用微电子半导体加工技术,已经制成了边缘支撑型ALN晶片。晶片厚度为1.0至7微米,面积约为300平方微米。这种晶片是边缘支撑型的,这与以前报道的底膜支撑型薄膜是不相同的。厚度为6.5微米的典型ALN晶片在790兆赫附近产生基模谐振,耦合系数为10.3％。在-20℃至120℃范围内测得的温度系数可达到-20.5×10~(-6)/℃。目前,已按外延特性制造出具有水平C轴的氧化锌ZnO晶片。这种晶片显示出切变波谐振特性,这意味着晶片有很高的谐振Q和比较简单的模式结构。
In order to control and operate the fundamental mode oscillator in the ultrahigh frequency range, the basic material and device characteristics of the small body wave resonator have been studied. This article reports the performance of aluminum nitride (ALN) in terms of the geometry of the composite resonator and the edge-supporting wafer structure. The ALN thin film is produced by the plasma reaction between the AL sputtered by the intermediate electrode and N 2 in the plasma gas in a DC flat-plate magnetron sputtering apparatus. General sputtering conditions are: sputtering pressure = 1 × 10 -3 hairs, air nitrogen content = 99.999% substrate temperature = 200 ° C, DC power -225 watts, sputtering rate = 1.2 μm / hr. The quality of the ALN films was characterized by scanning electron microscopy (SEM), X-ray diffraction and Auger electron spectroscopy. The test results show that the sputtered ALN film has a strict crystal orientation with a C-axis perpendicular to the Si (silicon) substrate surface. For a resonator consisting of a 1.7 micron ALN film and an 8 micron Si substrate, the fundamental frequency of the series resonant frequency was 328.53 MHz and the fundamental frequency parallel resonant frequency was 328.61 MHz. The Q-factor of this type of resonator is about 7500. The measured temperature coefficient in the range of -20 ° C to + 120 ° C is about -4 × 10 -8 / ° C. For a resonator with a 1.7 micron ALN film and a 6 micron Si substrate, the measured temperature coefficient is -6x10 -6 / ° C. The Q-factor of this type of resonator is about 5000, its fundamental series resonant frequency is 524.11 MHz, and the fundamental parallel resonant frequency is 524.45 MHz. Application of microelectronic semiconductor processing technology, has been made of edge-supported ALN wafers. Wafers are 1.0 to 7 microns thick and have an area of about 300 square microns. The wafers are edge-supported, unlike the previously reported backing film. A typical ALN wafer with a thickness of 6.5 microns produces fundamental mode resonance around 790 MHz with a coupling coefficient of 10.3%. The temperature coefficient measured in the range of -20 ℃ to 120 ℃ can reach -20.5 × 10 -6 / ℃. At present, zinc oxide ZnO wafers having a horizontal C-axis have been manufactured in terms of epitaxial properties. This wafer shows the shear wave resonance characteristics, which means that the wafer has a high resonance Q and a relatively simple mode structure.