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Using 0.18 μm CMOS transistors,the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis,we realize that total dose radiation causes a lot of trapped positive charges in STI(shallow trench isolation) SiO2 layers,which induces a current leakage passage,increasing the 1/f noise power of CMOS transistors. In addition,we design some radiation-hardness structures on the CMOS transistors and the experimental results show that,until the total dose achieves 750 krad,the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged,which proves our conclusion.
The total dose effects on the 1 / f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1 / f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1 / f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.