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SrBi2-χNdχNb2O9(χ=0,0.1,0.2 and 0.4)bismuth layer-structured ferroelectric ceramics were prepared by the solid-state reaction sintering method.The accurate position of Nd element in SrBi2-χNdχNb2O9 ceramics was determined by the X-ray Rietveld method and Synchrotron radiation X-ray absorption fine structure(XAFS)technology.The partial substitution of Nd 3+ for Bi 3+ leads to the decrease in the distortion of NbO6 octahedron for SrBi2-χNdχNb2O9 ceramics and also lowers the piezoelectric properties of SrBi2-χNdχNb2O9 ceramics.Meanwhile,the temperature coefficient of resonant frequency(TCF)decreases when Nd element partially replaces Bi element in SrBi2-χNdχNb2O9 ceramics.
SrBi2-xNdχNb2O9 (χ = 0,0.1,0.2 and 0.4) bismuth layer-structured ferroelectric ceramics were prepared by the solid-state reaction sintering method. The accurate position of Nd element in SrBi2-xNdχNb2O9 ceramics was determined by the X-Ray Rietveld method and Synchrotron radiation X-ray absorption fine structure (XAFS) technology. The partial substitution of Nd 3+ for Bi 3+ leads to the decrease in the distortion of NbO 6 octahedron for SrBi 2 -XNd x Nb 2O ceramics and also lowers the piezoelectric properties of SrBi 2- χNdχNb2O9 ceramics.Meanwhile, the temperature coefficient of resonant frequency (TCF) decreases when Nd element partially replaces Bi element in SrBi2-χNdχNb2O9 ceramics.