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用射频磁控溅射法在80℃的衬底温度下制备出MgxZn1-xO(0≤x≤0.30)薄膜.x射线衍射(XRD)结果表明,MgxZn1-xO薄膜为单相六角纤锌矿结构,没有形成任何显著的MgO分离相,MgxZn1-xO薄膜的择优取向平行于与衬底垂直的c轴;c轴晶格常数随着Mg含量的增加逐渐减小.在MgxZn1-xO薄膜的光透射谱中出现锐利的吸收边,由透射谱估算出MgxZn1-xO薄膜的带隙宽度由3.32eV(x=0)线性地增加到3.96eV(x=0.30).
The films of MgxZn1-xO (0≤x≤0.30) were prepared by radio-frequency magnetron sputtering at a substrate temperature of 80 ° C. X-ray diffraction (XRD) results show that the MgxZn1-xO films are single phase hexagonal wurtzite structure , No significant MgO phase was formed, and the preferred orientation of MgxZn1-xO films was parallel to the c-axis perpendicular to the substrate. The c-axis lattice constant decreased with the increase of Mg content. The sharp absorption edge appears in the spectrum, and the band gap width of MgxZn1-xO film is linearly increased from 3.32eV (x = 0) to 3.96eV (x = 0.30) from the transmission spectra.