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一般都认为现在批量生产的4M DRAM是主要推动技术发展的存储器,它加快了16MDRAM,64MDRAM半微米之后的器件开发,随着器件的高集成化的发展,对强流离子注入机的依赖性越发高,而且还必须适应严格的工艺要求,特别是随着器件的微细化,浅结技术已是离子注入工艺的关键工艺,为此,开发了BF_2~+低能注入和Si~+、Ge~+的预非晶技术等,另外,对MOS工艺中α射线控制、双极型工艺中隐埋层集电极形成等高能中的工艺要求也不少,而且,在器件批量生产时为了实现高成品率,对装置的净化要求也很强烈,正在由以前控制圆片异物的时代向控制束纯度、真空质量的时代转变,即由“量”到“质”的转变。
It is generally accepted that mass-produced 4M DRAMs are the main memory for technology advancement. They accelerate the development of devices after 16MDRAM and 64MDRAM in a half micron. With the high integration of devices, the dependence on strong ion implanters becomes more and more High, and must also meet the stringent process requirements, especially with the miniaturization of the device, shallow junction technology has been the key process ion implantation process, therefore, developed BF_2 ~ + low energy injection and Si ~ +, Ge ~ Of the pre-amorphous technology, in addition, the α-ray control in the MOS process, bipolar process buried layer collector electrode formation in high-energy process requirements are not less, and, in the device mass production in order to achieve high yield , The purifying requirements of the device are also very strong. It is changing from the era of controlling the foreign matter of the wafer to the age of the control beam purity and the quality of the vacuum, that is, the change from “quantity” to “quality”.