采用反应磁控溅射法制备非晶硅锗(Si1-x Gex)半导体薄膜,并对其组分、结构、光学性质及影响光学性质的因素进行研究。结果表明:该方法简单、成本低,且制备的非晶Si1-x Gex薄膜成分均匀、表面质量好、光学吸收系数高、带隙可调。另外提高氢气分压可使薄膜带隙升高,而低于300℃的衬底温度调节对薄膜的带隙影响不明显,退火温度对薄膜的带隙也有影响,高于800℃退火时,薄膜开始微晶化且光学带隙迅速减小。 The amorphous silicon germanium (Si1-x Gex) semiconductor thin films were prepared by reactive magnetron sputtering and the composition, structure, optical properties and optical properties were studied. The results show that the method is simple and low cost. The prepared amorphous Si1-x Gex films have uniform composition, good surface quality, high optical absorption coefficient and adjustable band gap. In addition, increasing the hydrogen partial pressure can increase the bandgap of the film, while the substrate temperature regulation below 300 ℃ has no obvious effect on the bandgap of the film. The annealing temperature has an effect on the bandgap of the film, Crystallization begins and the optical bandgap rapidly decreases.