论文部分内容阅读
英飞凌科技股份公司全新推出一款单片集成逆导二极管的650V器件,再次扩展其最新一代逆导软开关IGBT(绝缘栅双极晶体管)产品线。英飞凌的RC-H5系列产品性能卓越,而新推出的这款器件更将显著扩大RC-H5系列产品的应用范围。全新的分立式RC-H5650V电源半导体是多炉盘电磁炉和带逆变器微波炉的绝佳之选,也是各类硬开关半桥配置拓扑结构的最佳选择。新推出的分立式RC-H5650V电源半导体与所有的RC-H5产品一样,比
Infineon Technologies AG is introducing a new 650V device with a monolithically integrated reverse-conducting diode, again expanding its newest generation of reverse-conducting switching IGBT (Insulated Gate Bipolar Transistor) product lines. Infineon’s RC-H5 series of products with excellent performance, and the new device will significantly expand the RC-H5 series of applications. The new discrete RC-H5650V power semiconductors are ideal for multi-tray induction cooktops and microwave ovens with inverters and are the best choice for topologies of all types of hard-switched half-bridge configurations. The new discrete RC-H5650V power semiconductors, like all RC-H5 products,