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采用分子束外延MBE技术,在Si衬底上外延高质量的20周期SiGe/Si多量子阱(MQW)层;以SiGe/Si MQW材料作为吸收区,在Si基上制备波导型PIN光电探测器;金属Al制作在器件的台面上下,形成金属-半导体肖特基接触。测试结果表明,器件在-2V偏压下,对台面面积为7 500μm2,暗电流为0.1μA;在0V偏压下,探测器的光响应谱的吸收峰值为1 008nm,并可以观察到随着吸收长度的增大,响应信号也随之增大。
A 20-cycle SiGe / Si multiple quantum well (MQW) layer is epitaxially grown on a Si substrate by molecular beam epitaxy (MBE) technology. A waveguide-type PIN photodetector is fabricated on a Si substrate using SiGe / Si MQW as an absorber ; Metal Al is fabricated on and under the mesa of the device to form a metal-semiconductor Schottky contact. The test results show that the device has a surface area of 7 500 μm 2 and a dark current of 0.1 μA at a bias voltage of -2V. The absorption peak of the light-response spectrum of the detector at a voltage of 0 V is 1 008 nm and can be observed as Absorption length increases, the response signal also increases.