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用传输线模型对 n型 Al Ga N(n- Al Ga N)上 Au/ Pt/ Al/ Ti多金属层欧姆接触进行了接触电阻率的测量 .在85 0℃退火 5 min后 ,测得欧姆接触电阻率达 1.6× 10 - 4Ω· cm2 .经 X射线衍射分析 ,Au/ Pt/ Al/ Ti/ n- Al Ga N界面固相反应得出在 5 0 0℃以上退火过程中 ,Al Ga N层中 N原子向外扩散 ,在 Al Ga N表面附近形成 n型重掺杂层 ,导致欧姆接触电阻率下降 ;随退火温度的升高 ,N原子外扩散加剧 ,到 80 0℃以上退火在 Au/ Pt/ Al/ Ti/ n- Al Ga N界面形成 Ti2 N相 ,导致欧姆接触电阻率进一步下降
The ohmic contact resistance of Au / Pt / Al / Ti multimetallic layer on n-type AlGaN (n-Al Ga N) was measured by transmission line model. After annealing at 85 0 C for 5 min, The resistivity reaches 1.6 × 10 - 4Ω · cm2. The solid state reaction at the interface of Au / Pt / Al / Ti / nAlGa N results in the XRD analysis of the Al Ga N layer N atoms diffused outward to form n-type heavily doped layer near the surface of Al Ga N, resulting in the decrease of ohmic contact resistivity. With the increase of annealing temperature, The Ti2N phase is formed at the Pt / Al / Ti / n-AlGaN interface, resulting in a further decrease in ohmic contact resistivity