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用可变的周界区域逼近法,以及用园柱形近似把少数载流子电流表示为径向电流之和来研究双扩散双极晶体管自发射极周界向基区的注入效应。综合上述结果与有源基区(即发射极下面的部分)的结果,看到,通过引进周界基区中的电荷和电流,可改进h_(FE)和f_T随I_C变化关系的预测。所用方法的优点为:1)便于快速计算,2)把有源区和周界的基区分开,并提出一种依据制造数据设计器件时改进精度的好方法。
The effect of injection from the emitter periphery to the base region of the double diffused bipolar transistor was investigated by using a variable perimeter region approximation method and using a cylindrical approximation to represent the minority carrier current as the sum of the radial currents. Combining the above results with the results of the active base region (ie, the portion below the emitter), we see that the prediction of the change in h_ (FE) and f_T with I_C can be improved by introducing the charge and current in the perimeter base region. The advantages of the method used are: 1) to facilitate fast calculations, 2) to separate the active area from the perimeter base area, and to provide a good method of improving the accuracy of device design based on manufacturing data.