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理论模拟了不同GaN沟道厚度的双异质结(AlGaN/GaN/AlGaN/GaN)材料对高电子迁移率晶体管(HEMT)特性的影响,并模拟了不同F注入剂量下用该材料制作的增强型器件的特性差异.采用双异质结材料,结合F注入工艺成功地研制出了较高正向阈值电压的增强型HEMT器件.实验研究了三种GaN沟道厚度制作的增强型器件直流特性的差异,与模拟结果进行了对比验证.采用降低的F注入等离子体功率,减小了等离子体处理工艺对器件沟道迁移率的损伤,研制出的器件未经高温退火即实现了较高的跨导和饱和电流特性.对14 nm GaN沟道厚度的器件进行了阈值电压温度稳定性和栅泄漏电流的比较研究,并且分析了双异质结器件的漏致势垒降低效应.
The effect of the double heterojunction (AlGaN / GaN / AlGaN / GaN) materials with different GaN channel thicknesses on the properties of high electron mobility transistors (HEMTs) is simulated theoretically and the enhancement made with this material at different F implantations Type devices.An improved HEMT device with higher forward voltage threshold was developed by using double heterojunction materials combined with F implantation.The experimental results show that the DC characteristics of the enhanced devices with three GaN channel thicknesses , And compared with the simulation results.Compared with the F injection plasma power, the damage of the channel mobility of the device by the plasma treatment process is reduced, and the developed device achieves a high Transconductance and saturation current characteristics were compared for the threshold voltage temperature stability and gate leakage current for a 14 nm GaN channel thickness device, and the leakage barrier reduction effect of the double heterojunction device was analyzed.