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以氦灯真空紫外光源研究了辐照下 n(100)硅衬底MOS样品的氧化层陷阱和Si-SiO_2界面态.发现在湿氧和干氧氧化层中都存在密度为10~(12)/cm~2数量级的空穴陷阱,部分氧化层中有密度为10~(11)/cm~2的受主型电子陷阱.湿氧样品在正偏置和零偏置辐照后出现具有确定能级(E_c-E_s(?)0.40eV)的界面态密度宽峰.辐照引进的界面态和空穴被陷阱俘获有关,在1×10~(10)～5 × 10~(11)cm~(-2)·eV~(-1)范围,禁带中央界面态密度正比于被俘获空穴的密度.辐照产生的界面态不能由电子注入加以消除.本文由空穴俘获-弱键破裂模型讨论了实验结果.
The oxide layer traps and Si-SiO 2 interfacial states of n (100) silicon substrate irradiated by irradiation with helium vacuum ultraviolet light were studied, and the results showed that the densities of 10 ~ (12) / cm ~ 2 hole traps, some acceptor electron traps with a density of 10 ~ (11) / cm ~ 2 are present in some of the oxide layers.The wet oxygen samples appear to have a certain value after positive and zero bias irradiation (E_c-E_s (?) 0.40eV). The interface states induced by irradiation are related to the hole traps trapped in the region of 1 × 10 ~ (10) ~5 × 10 ~ (11) cm ~ (-2) · eV ~ (-1), the density of states at the center of forbidden band is proportional to the density of trapped holes, and the interface state caused by irradiation can not be eliminated by electron injection.In this paper, The rupture model discusses the experimental results.