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以石墨为阳极、钛片为阴极,采用恒电流法制备Cu-In预制膜,然后硒化处理得到CuInSe2薄膜.分析了预制膜和CuInSe2薄膜的相组成及其影响因素.结果表明:采用不同的电沉积工艺,可以得到不同相组成的Cu-In预制膜.在保证Cu/In小于1的条件下,降低InCl3浓度和H3Cit/CuCl2浓度比,选择较高电流,可以获得具有CuIn相和Cu2In相的Cu-In预制膜.含有CuIn相和Cu2In相的Cu-In预制膜,经硒化得到的CuInSe2薄膜具有单一CuInSe2相组成,并且符合化学剂量比要求;而只含有CuIn相的预制膜硒化后除了有CuInSe2相外还出现了CuSe相.
Graphite as anode and titanium as cathode, Cu-In pre-film was prepared by galvanostatic method and then selenized to obtain CuInSe2 film.The phase composition of pre-film and CuInSe2 film were analyzed and the influencing factors were analyzed.The results showed that: Electrodeposition process, the Cu-In pre-film with different phases can be obtained.When the InCl3 concentration and the H3Cit / CuCl2 concentration ratio are reduced under the condition of Cu / In less than 1, higher current can be obtained to obtain the Cu- Of Cu-In prefilm.CuInSe2 films containing CuIn phase and Cu2In phase, the CuInSe2 films obtained by selenization have a single CuInSe2 phase composition, and meet the chemical dosage ratio requirements; and pre-film containing only CuIn phase selenization In addition to having a CuInSe2 phase, a CuSe phase also appeared.