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石墨烯纳米带场效应管(graphene nanoribbon field effect transistor,GNRFET)作为后硅基时代集成电路基础器件的有力竞争者受到广泛关注。以数字电路应用为指向,基于密度泛函理论的计算仿真,对GNRFET的结构设计优化进行了研究。分析了宽度N=3m和N=3m+1(m为正整数)两系列半导体型石墨烯纳米带的传输特性,结果表明N=3m系的扶手椅型石墨烯纳米带(armchair GNR,AGNR)更适合作为晶体管的沟道。研究了掺杂对GNRFET性能的影响,得到明显n型特性,并确定了掺杂位置;探讨了沟道长度对器件的影响,得到了较大的开关电流比(约1 700)和较小的亚阈值摆幅(30～40 mV/decade)。这些优化手段有效提高了GNRFET的性能,可指导其设计和制备。
Graphene nanoribbon field effect transistors (GNRFETs) are gaining widespread attention as powerful contenders for post-silicon based integrated circuit foundries. Based on the application of digital circuit, the structural design and optimization of GNRFET are studied based on the computational simulation of density functional theory. The transmission properties of two series of semiconducting graphene nanoribbons with N = 3m and N = 3m + 1 (m is a positive integer) were analyzed. The results showed that armchair GNR (AGNR) More suitable as a transistor channel. The influence of doping on the performance of GNRFET was studied, the obvious n-type characteristic was obtained and the doping position was determined. The influence of channel length on the device was also discussed. The larger switching current ratio (about 1 700) and the smaller Subthreshold swing (30 ~ 40 mV / decade). These optimization methods effectively improve the performance of GNRFETs and guide their design and preparation.