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高温可靠性是目前限制SiC MOSFET晶体管高温应用的关键问题之一。本文介绍了基于国内碳化硅器件工艺平台研制的1 200 V SiC MOSFET器件的直流特性,并通过高温栅偏(HTGB)和高温反偏(HTRB)试验对器件高温可靠性进行测试分析。试验结果表明:所研制的1 200 V SiC MOSFET器件在经过168 h的HTGB和HTRB可靠性试验后,所有测试器件的击穿电压>1 200 V,阈值电压偏移量<15%,导通电阻偏移量<15%,显示出优良的器件鲁棒性,也初步证明了国产SiC MOSFET器件的设计、工艺及其研制的可行性。
High temperature reliability is one of the key issues that limit the high temperature application of SiC MOSFET transistors. In this paper, the DC characteristics of a 1 200 V SiC MOSFET device based on the domestic silicon carbide device technology platform are introduced. The high temperature reliability of the device is tested by HTGB and HTRB tests. The experimental results show that the breakdown voltage of all test devices is> 1 200 V, the threshold voltage deviation is less than 15%, the on-resistance of the tested 1 200 V SiC MOSFET device after 168 h of HTGB and HTRB reliability test Offset <15%, showing good robustness of the device, but also initially proved the design of domestic SiC MOSFET devices, process and feasibility of its development.