InP单晶是制作长波长光源器件和光电探测器的衬底材料,在微波领域的应用也已经取得了显著进展,在未来新能源中,它又是一种很有希望的太阳电池的材料。为制作以上器件,InP单晶衬底片的制备是极为重要的。一制备工艺 1.研磨单晶切割时,由于机械的振动和切割刀片上金刚砂的摩擦,使单晶片表面下有一定深度的损伤。损伤程度受切割机转速、机械振动和刀片质量等影响,一般为几十微米。为了消除切割留下的刀痕和损伤层,需要进 InP single crystal is a substrate material for fabricating long wavelength light source devices and photodetectors and has made significant progress in the application of microwaves. It is also a promising solar cell material in future new energy sources. Preparation of these devices, InP single crystal substrate preparation is extremely important. A preparation process 1. Grinding single crystal cutting, due to mechanical vibration and abrasion of the diamond on the cutting blade, so that there is a certain degree of damage under the surface of the single crystal. The degree of damage by the cutting machine speed, mechanical vibration and blade quality, etc., generally tens of microns. In order to eliminate the cutting marks and damage left by cutting, need to enter