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本文介绍我们通过掩膜图形的设计，在（１００）单晶硅上利用氢氧化钾各向异性腐蚀制作错综复杂的正八边形单晶硅膜的方法。据此技术可获得最小外接圆半径仅为腐蚀深度的２．６７倍的小尺寸正八边形单晶硅膜，其力学性能大大优于同样面积的等厚方形单晶硅膜，满足微动力机械的要求。
This article presents an approach to the fabrication of intricate regular octagonal monocrystalline silicon films using (100) monocrystalline silicon by anisotropic etching of potassium hydroxide by mask pattern design. According to this technique, a small-sized, regular octagonal monocrystalline silicon film with a minimum circumscribed circle radius of 2.67 times the corrosion depth can be obtained. The mechanical properties of the small octagonal monocrystalline silicon film are much better than those of the same area, Request.