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研究了CH_4/H_2/Cl_2感应耦合等离子体刻蚀技术中的关键工艺参数对刻蚀性能的影响。通过对CH_4/H_2/Cl_2气体流量及流量比的优化,在自行设计的InP/InGaAlAs多量子阱结构的外延片上,实现了一种高速低损耗、形貌良好的Bragg光栅制作方法。基于优化后的工艺参数制作了多周期结构的λ/4相移光栅,实现了单片集成的四波长1.3μm分布反馈式激光器阵列。该激光器阵列中激光器的阈值电流典型值为11mA,外微分效率可达0.40 W/A,且实现了边摸抑制比大于46dB的稳定的单纵模激光输出。研究结果表明优化后的ICP光栅刻蚀工艺具有良好的刻蚀精度和可靠性。
The effect of key process parameters on the etching performance of CH_4 / H_2 / Cl_2 inductively coupled plasma etching was studied. By optimizing the CH 4 / H 2 / Cl 2 gas flow rate and flow ratio, a high speed and low loss, good morphology Bragg grating fabrication method is realized on the epitaxial wafer of InP / InGaAlAs MQW structure designed by ourselves. A multi-period λ / 4 phase-shift grating is fabricated based on the optimized process parameters, and a monolithically integrated four-wavelength 1.3 μm distributed feedback laser array is achieved. The lasers in this laser array typically have a threshold current of 11 mA, an external derivative efficiency of 0.40 W / A, and a stable single longitudinal mode laser output with an edge-to-beat rejection ratio greater than 46 dB. The results show that the optimized ICP grating etching process has good etching accuracy and reliability.