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Kilopass研发出了一种全新的垂直分层晶闸管(Vertical Layered Thyristor,VLT)SRAM单元,其特性可支持它作为DRAM存储单元。这种存储单元具有静态特性,不需要进行刷新操作,这样一来与传统DRAM相比,极大地简化了电路结构。VLT存储单元完全可由现有的材料与设备来制造。对目前的DRAM制造商来说,制造VLT时所需的所有工艺步骤都是制造传统DRAM时所包含的步骤。其他代工厂可以根据现有设施和材料使用一些新的工艺步骤。
Kilopass has developed a new Vertical Layered Thyristor (VLT) SRAM cell with features that support it as a DRAM cell. This memory cell has static characteristics and does not require a refresh operation, thus greatly simplifying the circuit structure compared to conventional DRAMs. VLT memory cells can be made entirely of existing materials and equipment. For current DRAM manufacturers, all the process steps required to make a VLT are the steps involved in making a conventional DRAM. Other foundries can use some new process steps based on existing facilities and materials.