日本电气基础技术研究所研究成功一种能用于隔离大规模集成元件的硅选择生长技术。这种技术的一个突出的特点是:除了作为生长气体的SiH_2Cl_2外还添加HCl,并在50毛的减压下进行生长。生长气体中加入HCl提高了选择性,采用减压获得了平坦的表面。目的是要将这种技术用于双极大规模集成电路和CMOS元件的隔离方法。 Japan's Institute of Electrical and Basic Technology to study a success of a large-scale integrated components used to isolate the silicon growth of selective technology. A salient feature of this technology is the addition of HCl in addition to SiH 2 Cl 2 as a growth gas and growth under a reduced pressure of 50 hairs. The addition of HCl to the growth gas increases the selectivity, and the depressurization results in a flat surface. The goal is to apply this technique to the isolation of bipolar LSIs and CMOS components.