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基于低温(～4K)光致发光谱对工艺及测量条件的依赖关系,分析了MBEGaAs缺陷络合线系的结构和来源,给出了与Haynes规则相容的解释。
Based on the dependence of low temperature (~ 4K) photoluminescence spectra on the process and measurement conditions, the structure and origin of the MBEGaAs defect complex line system were analyzed, and the explanation compatible with Haynes rule was given.