一、引言液相外延薄层厚度的控制是GaAsGa_xAl_(1-x)As双异质激光器制备中的一个基本问题,是提高器件寿命的重要措施,也是发展新型器件和集成光学的基础。过去所采用的“配源”的液相生长方法,存在外延薄层 I. INTRODUCTION The control of the thickness of the liquid phase epitaxy is a basic problem in the fabrication of GaAsGa_xAl_ (1-x) As double heterogeneous lasers. It is an important measure to improve the lifetime of the devices and also the basis for the development of new devices and integrated optics. In the past, “matched source” liquid-phase growth method, the presence of epitaxial thin layer