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内价带吸收(IBA)对确定长波长半导体激光器的微分量子效率是重要的,而对确定其阈值电流就不那么重要。在此,报道了洲量Ga_(·47)In_(·53)As和InP的IBA的频谱特性及IBA对温度的依赖性。测试材料两边是晶格匹配于InP的Ga_xIn_(1-x)As_yP_(1-y)组份。用半绝缘掺Fe衬底上生长的～15μm厚外延层,就能进行Ga_(·47)In_(·53)As的IBA测量。通过霍尔测景确定每种样品的载流子密度。从远红外到能隙所记录的吸收光谱表明,在1～2μm区间主要吸收是空穴从浓空穴带
The intrinsic band absorption (IBA) is important for determining the differential quantum efficiency of long-wavelength semiconductor lasers and less important for determining the threshold current. Here, we report the spectral characteristics of IBA and the dependence of IBA on the temperature of Ga_ (47) In_ (53) As and InP. Both sides of the test material are Ga_xIn_ (1-x) As_yP_ (1-y) components lattice-matched to InP. The IBA measurement of Ga_ (47) In_ (53) As can be performed with a ~ 15 μm thick epitaxial layer grown on a semi-insulating doped Fe substrate. The carrier density of each sample was determined by Hall measurement. The absorption spectra recorded from the far-infrared to the energy gap indicate that the main absorption in the interval of 1 to 2 μm is the absorption of holes from the concentrated hole