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利用低压金属有机化学气相沉积技术(LP-MOCVD)生长InGaAs/GaAs单量子阱(SQW),通过改变生长速率、优化生长温度和V/III比改善了量子阱样品的室温光致发光(PL)特性。测试结果表明,当生长温度为600℃、生长速率为1.15μm/h时,生长的量子阱PL谱较好,增加V/III比能够提高量子阱的发光强度。实验分析了在不同的In气相比条件下,生长速率对量子阱质量的影响,利用模型解释了高In气相比时,随着生长速率增加PL谱蓝移现象消失的原因。
InGaAs / GaAs single quantum well (SQW) was grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD), and room temperature photoluminescence (PL) of quantum well samples was improved by changing the growth rate, optimizing the growth temperature and V / characteristic. The results show that when the growth temperature is 600 ℃ and the growth rate is 1.15μm / h, the PL spectrum of the growing quantum well is better. Increasing V / III ratio can improve the emission intensity of the quantum well. The effect of growth rate on the quantum well is experimentally analyzed under different conditions of In gas, and the reason why the blue shift of PL spectrum disappears with the increase of growth rate is explained by the model.