Ni83Fei7 films with a thickness of about 100 ran were deposited on thermal oxidized silicon substrates at ambient temperature, 240, 350, and 410℃ by DC magnetron sputtering. The deposition rate was about 0.11 nm/s. The as-deposited films were annealed at 450, 550, and 650℃, respectively, in a vacuum lower than 3 x 10-3 Pa for 1 h. The Ni83Fei7 films mainly grow with a crystalline orientation of [111] in the direction of the film growth. With the annealing temperature increasing, the [111] orientation enhances. For films deposited at all four different temperatures, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃, the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For films deposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃ annealing. The atomic force microscopy (AFM) observation shows a significant i Ni83Fei7 films with a thickness of about 100 ran were deposited on a thermal oxidized silicon substrates at ambient temperature, 240, 350, and 410 ° C by DC magnetron sputtering. The deposition rate was about 0.11 nm / s. The as-deposited films were annealed at 450, 550, and 650 ° C., respectively, in a vacuum lower than 3 × 10 -3 Pa for 1 h. The Ni83Fei7 films mainly grow with a crystalline orientation of [111] in the direction of the film growth. increasing, the [111] orientation enhances. For films deposited at all four different temperatures, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550 ° C. But for films deposited at ambient temperatures and 240 ° C., the anisotropic magnetoresistance can only The atomic force microscopy (AFM) observables were annealed at 650 ° C. The films were fired at 350 ° C and 410 ° C and the anisotropic magnetoresistance was raised to about 3.8% after annealing at 650 ° C. tion shows a significant i