论文部分内容阅读
光学光刻技术在微细加工和集成电路(IC)制造中一直是主流技术。随着IC集成度的提高,要求越来越高的光刻分辨力,但光学光刻的分辨极限受光刻物镜数值孔径(NA)和曝光波长(λ)的限制。激光干涉光刻技术具有高分辨、大视场、无畸变、长焦深等特点,其分辨极限为λ/4,在微细加工、大屏幕显示器、微电子和光电子器件、亚波长光栅、光子晶体和纳米图形制造等领域有广阔的应用前景。阐述了激光干涉光刻技术的基本原理。提出了一种采用梯形棱镜作为波前分割元件的激光干涉光刻方法。建立了相应的曝光系统,该系统可用于双光束、三光束、四光束和五光束等多光束和多曝光干涉光刻。给出了具有点尺寸约220nm的周期图形阵列的实验结果。
Optical lithography has been the dominant technology in microfabrication and integrated circuit (IC) manufacturing. As IC integration increases, higher and higher lithographic resolution is required, but the resolution limit of optical lithography is limited by the numerical aperture (NA) and exposure wavelength (λ) of the lithography objective. Laser interferometric lithography has the characteristics of high resolution, large field of view, no distortion and long focal length. The resolution limit is λ / 4. In the micromachining, large screen displays, microelectronics and optoelectronic devices, subwavelength gratings, photonic crystals And nano-graphic manufacturing and other fields have broad application prospects. The basic principle of laser interference lithography is described. A laser interferometric lithography method using trapezoidal prism as a wavefront segmentation element is proposed. A corresponding exposure system has been established, which can be used for multi-beam and multi-exposure interference lithography such as two beams, three beams, four beams and five beams. The experimental results of a periodic pattern array with a dot size of about 220 nm are given.