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利用红外椭偏光谱法(IRSE)对生长在蓝宝石衬底上的非故意掺杂的GaN外延膜进行了研究。通过对椭偏光谱的理论计算,拟合了本征GaN中的声子振动参量和等离子振荡的频率及阻尼常量,并由此得到了各向异性的折射率和消光系数的色散曲线以及载流子浓度和迁移率。将得到的电学参数同霍耳测量结果进行了比较。
Infrared ellipsometry (IRSE) was used to investigate unintentionally doped GaN epitaxial films grown on sapphire substrates. Through the theoretical calculation of the ellipsometry, the phonon vibration parameters and the plasma oscillation frequency and damping constant in the intrinsic GaN were fitted, and the anisotropic refractive index and extinction coefficient dispersion curves were obtained, Sub-concentration and mobility. The resulting electrical parameters were compared with those of the Hollister measurement.