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1975年11月13日在日本电化学协会电子材料委员会召开的《第九届半导体集成电路技术讨论会》上,小松电子金属公司发表了对硅烷法提纯采用分子筛吸附剂,制备具有10K-80KΩcm电阻率(原来电阻率约为1 KΩcm)的超高纯硅晶体成功。目前,随着半导体器件的高性能化,而更迫切需要超高纯的硅晶体。以前的硅晶体制备
On November 13, 1975, at the 9th Symposium on Semiconductor Integrated Circuit Technology held by Japan Electrochemical Society's Electronic Materials Committee, Komatsu Electronics Co., Ltd. published a report on the use of molecular sieve adsorbents for the purification of silane to prepare a catalyst having a resistance of 10K-80KΩcm The rate (the original resistivity of about 1 KΩcm) of ultra-high purity silicon crystal success. Currently, with the high performance of semiconductor devices, ultrahigh-purity silicon crystals are urgently needed. Previous silicon crystal preparation