论文部分内容阅读
In this report,the diffusion of Zn,Zn-Cd in In_xGa_(1-x)As is investigated using ZnAs_2and ZnAs_2+Cd as diffusion sources.The effect of the diffusion temperature,diffusion time,a variety of the diffusion source andcomposition x of the material on the relation of the(X_j-t~(1/2))are given.The diffusion velocity X_j~2/t of Zn inIn_xGa_(1-x)As is faster than that of Zn-Cd in In_xGa_(1-x)As,and at 500-600℃,the surface acceptorconcentration is from 1×10~(19)to 2×10~(20)cm~(-3),which is higher than that of Zn in InP.Reduction ofcontact resistance by use of In_xGa_(1-x)As contact layer for 1.3μm LED can be expected.
In this report, the diffusion of Zn, Zn-Cd in In_xGa_ (1-x) As is investigated using ZnAs_2and ZnAs_2 + Cd as diffusion sources. The effect of the diffusion temperature, diffusion time, a variety of the diffusion source and composition x of (1_x) As is faster than that of Zn-Cd in In_xGa_ (1-x) As -x) As, and at 500-600 ° C, the surface acceptor concentration is from 1 × 10 ~ (19) to 2 × 10 ~ (20) cm ~ 3, which is higher than that of Zn in InP. Reduction ofcontact resistance by use of In x Ga 1-x As contact layer for 1.3 μm LED can be expected.